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july 2006 rev 2 1/14 14 STW11NK100Z STW11NK100Z n-channel 1000v - 1.1 ? - 8.3a - to-247 zener - protected supermesh? powermosfet general features extremely high dv/dt capability 100% avalanche tested gate charge minimized very low intrinsic capacitances very good manufact uring repeatibility description the supermesh? series is obtained through an extreme optimization of st?s well established strip-based powermesh? layout. in addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. such series complements st full range of high voltage mosfets including revolutionary mdmesh? products. applications switching application internal schematic diagram type v dss (@tjmax) r ds(on) i d pw STW11NK100Z 1000 v < 1.38 ? 8.3 a 230w to-247 www.st.com order codes part number marking package packaging STW11NK100Z w11nk100z to-247 tube
contents STW11NK100Z 2/14 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 test circuit package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STW11NK100Z electrical ratings 3/14 1 electrical ratings table 1. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 1000 v v dgr drain-gate voltage (r gs = 20k ? ) 1000 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25c 8.3 a i d drain current (continuous) at t c =100c 5.2 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 33.2 a p tot total dissipation at t c = 25c 230 w derating factor 1.85 w/c v esd (g-s) gate source esd(hbm-c=100pf, r=1,5k ? ) 6000 v dv/dt (2) 2. i sd 8.3 a, di/dt 200a/s, v dd v (br)dss , t j t jmax peak diode recovery voltage slope 4.5 v/ns t j t stg operating junction temperature storage temperature -55 to 150 c table 2. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.54 c/w r thj-a thermal resistance junc tion-ambient max 50 c/w t l maximum lead temperature for soldering purpose 300 c table 3. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 8.3 a e as single pulse avalanche energy (starting tj=25c, id=iar, vdd=50v) 550 mj
electrical ratings STW11NK100Z 4/14 protection features of gate-to-source zener diodes the built-in back-to-back zener diodes have spec ifically been designed to enhance not only the device?s esd capability, but also to make them safely abs orb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-eff ective intervention to protect the device?s integrity. these integrated zener diodes th us avoid the usage of external components. table 4. gate-source zener diode symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1ma (open drain) 30 0 v
STW11NK100Z electrical characteristics 5/14 2 electrical characteristics (t case =25c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1ma, v gs = 0 1000 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating, tc = 125c 1 50 a a i gss gate body leakage current (v gs = 0) v gs = 20v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100a 3 3.75 4.5 v r ds(on) static drain-source on resistance v gs = 10v, i d = 4.15 a 1.1 1.38 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration=300s, duty cycle 1.5% forward transconductance v ds =15v, i d = 4.15a 9 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v, f=1 mhz, v gs =0 3500 270 60 pf pf pf c osseq (2) . 2. c oss eq. is defined as a constant equi valent capacitance giving t he same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs =0, v ds =0v to 500v 170 pf t d(on) t r t d(off) t f turn-on delay time rise time off-voltage rise time fall time v dd =800 v, i d = 8a, r g =4.7 ?, v gs =10v (see figure 16 ) 27 18 98 55 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =800v, i d = 8a v gs =10v 113 18 60 162 nc nc nc
electrical characteristics STW11NK100Z 6/14 table 7. source drain diode symbol parameter test conditions min typ. max unit i sd source-drain current 8.3 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) 33.2 a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5% forward on voltage i sd =8.3a, v gs =0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =8.3, di/dt = 100a/s, v dd =80v, tj=25c (see figure 18 ) 560 4.48 16 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =8a, di/dt = 100a/s, v dd =80v, tj=150c (see figure 18 ) 620 4.57 16 ns c a
STW11NK100Z electrical characteristics 7/14 2.1 electrical characteri stics (curves) figure 1. safe operating area figure 2. thermal impedance figure 3. output characterisics figure 4. transfer characteristics figure 5. transconductance figure 6. static drain-source on resistance
electrical characteristics STW11NK100Z 8/14 figure 7. gate charge vs gate-source voltage figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on resistance vs temperature figure 11. source-drain diode forward characteristics figure 12. normalized b vdss vs temperature
STW11NK100Z electrical characteristics 9/14 figure 13. maximum avalanche energy vs temperature
test circuit package mechanical data STW11NK100Z 10/14 3 test circuit package mechanical data figure 14. unclamped inductive load test circuit figure 15. unclamped inductive waveform figure 16. switching times test circuit for resistive load figure 17. gate charge test circuit figure 18. test circuit for inductive load switching and diode recovery times
STW11NK100Z package mechanical data 11/14 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
package mechanical data STW11NK100Z 12/14 dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 a1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 d 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e5.45 0.214 l 14.20 14.80 0.560 0.582 l1 3.70 4.30 0.14 0.17 l2 18.50 0.728 ?p 3.55 3.65 0.140 0.143 ?r 4.50 5.50 0.177 0.216 s5.50 0.216 to-247 mechanical data
STW11NK100Z revision history 13/14 5 revision history table 8. revision history date revision changes 21-jun-2004 1 preliminary version 31-jul-2006 2 new template, no content change.
STW11NK100Z 14/14 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2006 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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